Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Width
9.65mm
Number of Elements per Chip
1
Forward Diode Voltage
1.3V
Series
IRF3710ZS
Minimum Operating Temperature
-55 °C
Height
4.83mm
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,999
1 kpl (800 kpl/kela) (ilman ALV)
€ 1,239
1 kpl (800 kpl/kela) (Sis ALV:n)
800
€ 0,999
1 kpl (800 kpl/kela) (ilman ALV)
€ 1,239
1 kpl (800 kpl/kela) (Sis ALV:n)
800
Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Width
9.65mm
Number of Elements per Chip
1
Forward Diode Voltage
1.3V
Series
IRF3710ZS
Minimum Operating Temperature
-55 °C
Height
4.83mm