Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
14.6 A
Maximum Drain Source Voltage
30 V
Package Type
SO
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Maximum Operating Temperature
+150 °C
Width
4mm
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
41 nC @ 5 V
Series
IRF7809AV
Minimum Operating Temperature
-55 °C
Height
1.5mm
Forward Diode Voltage
1.3V
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,144
1 kpl (4000 kpl/kela) (ilman ALV)
€ 0,181
1 kpl (4000 kpl/kela) (Sis ALV:n)
4000
€ 0,144
1 kpl (4000 kpl/kela) (ilman ALV)
€ 0,181
1 kpl (4000 kpl/kela) (Sis ALV:n)
4000
Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
14.6 A
Maximum Drain Source Voltage
30 V
Package Type
SO
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Maximum Operating Temperature
+150 °C
Width
4mm
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
41 nC @ 5 V
Series
IRF7809AV
Minimum Operating Temperature
-55 °C
Height
1.5mm
Forward Diode Voltage
1.3V