Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
60 V
Series
StrongIRFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
88 nC @ 10 V
Width
4.83mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
16.51mm
Tuotetiedot
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 4,34
€ 0,867 1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 5,45
€ 1,088 1 kpl (5 kpl/pakkaus) (Sis ALV:n)
Standardi
5
€ 4,34
€ 0,867 1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 5,45
€ 1,088 1 kpl (5 kpl/pakkaus) (Sis ALV:n)
Standardi
5
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
5 - 20 | € 0,867 | € 4,34 |
25 - 45 | € 0,824 | € 4,12 |
50 - 120 | € 0,742 | € 3,71 |
125 - 245 | € 0,667 | € 3,34 |
250+ | € 0,635 | € 3,18 |
Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
60 V
Series
StrongIRFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
88 nC @ 10 V
Width
4.83mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
16.51mm
Tuotetiedot
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.