Tekninen dokumentti
Tekniset tiedot
Merkki
IXYSChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
500 V
Series
HiperFET, Q3-Class
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
6.5V
Maximum Power Dissipation
830 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
16.26mm
Typical Gate Charge @ Vgs
93 nC @ 10 V
Width
5.3mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
16.26mm
Alkuperämaa
United States
Tuotetiedot
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 20,10
1 kpl (30 kpl/putki) (ilman ALV)
€ 24,924
1 kpl (30 kpl/putki) (Sis ALV:n)
30
€ 20,10
1 kpl (30 kpl/putki) (ilman ALV)
€ 24,924
1 kpl (30 kpl/putki) (Sis ALV:n)
30
Tekninen dokumentti
Tekniset tiedot
Merkki
IXYSChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
500 V
Series
HiperFET, Q3-Class
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
6.5V
Maximum Power Dissipation
830 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
16.26mm
Typical Gate Charge @ Vgs
93 nC @ 10 V
Width
5.3mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
16.26mm
Alkuperämaa
United States
Tuotetiedot
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS