Tekninen dokumentti
Tekniset tiedot
Merkki
KYOCERA AVXSeries
NOS
Capacitance
220µF
Tolerance
±20%
Voltage
6.3V dc
Package/Case
7343-31
Mounting Type
Surface Mount
Equivalent Series Resistance
0.1Ω
Dissipation Factor
8%
Leakage Current
26.4 μA
Dimensions
7.3 x 4.3 x 2.9mm
Depth
4.3mm
Height
2.9mm
Dielectric Material Family
Niobium
Minimum Operating Temperature
-55°C
Terminal Type
Surface Mount
Tolerance Minus
-20%
Maximum Operating Temperature
+125°C
Length
7.3mm
Tolerance Plus
+20%
Tuotetiedot
NOS Series
OxiCap™
OxiCap™ is a solid electrolyte capacitor available in standard EIA case sizes as a cost effective high performance alternative to aluminium and tantalum surface mount technologies. The OxiCap™ non-burn technology is based on the widely available NbO niobium oxide ceramic material. They are processed through the same manufacturing process as tantalum capacitors, and have electrical parameters similar to general tantalum specifications.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 1,00
1 kpl (500 kpl/kela) (ilman ALV)
€ 1,255
1 kpl (500 kpl/kela) (Sis ALV:n)
500
€ 1,00
1 kpl (500 kpl/kela) (ilman ALV)
€ 1,255
1 kpl (500 kpl/kela) (Sis ALV:n)
500
Tekninen dokumentti
Tekniset tiedot
Merkki
KYOCERA AVXSeries
NOS
Capacitance
220µF
Tolerance
±20%
Voltage
6.3V dc
Package/Case
7343-31
Mounting Type
Surface Mount
Equivalent Series Resistance
0.1Ω
Dissipation Factor
8%
Leakage Current
26.4 μA
Dimensions
7.3 x 4.3 x 2.9mm
Depth
4.3mm
Height
2.9mm
Dielectric Material Family
Niobium
Minimum Operating Temperature
-55°C
Terminal Type
Surface Mount
Tolerance Minus
-20%
Maximum Operating Temperature
+125°C
Length
7.3mm
Tolerance Plus
+20%
Tuotetiedot
NOS Series
OxiCap™
OxiCap™ is a solid electrolyte capacitor available in standard EIA case sizes as a cost effective high performance alternative to aluminium and tantalum surface mount technologies. The OxiCap™ non-burn technology is based on the widely available NbO niobium oxide ceramic material. They are processed through the same manufacturing process as tantalum capacitors, and have electrical parameters similar to general tantalum specifications.