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LittelfuseMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
365 V
Maximum Gate Emitter Voltage
±15V
Maximum Power Dissipation
165 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.29 x 9.65 x 4.83mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Tuotetiedot
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Tarkista myöhemmin uudelleen.
€ 0,62
kpl (toimitus kelassa) (ilman ALV)
€ 0,769
kpl (toimitus kelassa) (Sis ALV:n)
5
€ 0,62
kpl (toimitus kelassa) (ilman ALV)
€ 0,769
kpl (toimitus kelassa) (Sis ALV:n)
5
Tekninen dokumentti
Tekniset tiedot
Merkki
LittelfuseMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
365 V
Maximum Gate Emitter Voltage
±15V
Maximum Power Dissipation
165 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.29 x 9.65 x 4.83mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Tuotetiedot
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.