Tekninen dokumentti
Tekniset tiedot
Merkki
MagnaChipChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
30.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
6.75 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
16.13mm
Alkuperämaa
China
Tuotetiedot
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
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€ 0,529
1 kpl (50 kpl/putki) (ilman ALV)
€ 0,664
1 kpl (50 kpl/putki) (Sis ALV:n)
50
€ 0,529
1 kpl (50 kpl/putki) (ilman ALV)
€ 0,664
1 kpl (50 kpl/putki) (Sis ALV:n)
50
Tekninen dokumentti
Tekniset tiedot
Merkki
MagnaChipChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
30.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
6.75 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
16.13mm
Alkuperämaa
China
Tuotetiedot
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.