Tekninen dokumentti
Tekniset tiedot
Merkki
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 30mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
50 Ω
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Minimum Operating Temperature
-65 °C
Alkuperämaa
China
Tuotetiedot
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,355
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 0,44
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
10
€ 0,355
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 0,44
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
10
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
10 - 90 | € 0,355 | € 3,55 |
100 - 190 | € 0,321 | € 3,21 |
200 - 390 | € 0,304 | € 3,04 |
400 - 790 | € 0,288 | € 2,88 |
800+ | € 0,25 | € 2,50 |
Tekninen dokumentti
Tekniset tiedot
Merkki
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 30mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
50 Ω
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Minimum Operating Temperature
-65 °C
Alkuperämaa
China
Tuotetiedot
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.