Tekninen dokumentti
Tekniset tiedot
Merkki
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
500 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
117 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
18.5 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Width
2.38mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
7.62mm
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 1,35
1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 1,674
1 kpl (5 kpl/pakkaus) (Sis ALV:n)
5
€ 1,35
1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 1,674
1 kpl (5 kpl/pakkaus) (Sis ALV:n)
5
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
5 - 45 | € 1,35 | € 6,75 |
50 - 120 | € 0,702 | € 3,51 |
125 - 245 | € 0,452 | € 2,26 |
250 - 495 | € 0,416 | € 2,08 |
500+ | € 0,382 | € 1,91 |
Tekninen dokumentti
Tekniset tiedot
Merkki
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
500 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
117 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
18.5 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Width
2.38mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
7.62mm