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ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
5.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3 + Tab
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
6.7mm
Typical Gate Charge @ Vgs
29 nC @ 10 V
Width
3.7mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.7mm
Minimum Operating Temperature
-65 °C
Tuotetiedot
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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Tarkista myöhemmin uudelleen.
€ 1,55
1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 1,922
1 kpl (5 kpl/pakkaus) (Sis ALV:n)
Standardi
5
€ 1,55
1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 1,922
1 kpl (5 kpl/pakkaus) (Sis ALV:n)
Standardi
5
Tekninen dokumentti
Tekniset tiedot
Merkki
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
5.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3 + Tab
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
6.7mm
Typical Gate Charge @ Vgs
29 nC @ 10 V
Width
3.7mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.7mm
Minimum Operating Temperature
-65 °C
Tuotetiedot
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.