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Tekniset tiedot
Merkki
ON SemiconductorMaximum Continuous Collector Current
105 (Pulse) A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
64 W
Package Type
TO-3PF
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.5 x 5.5 x 26.5mm
Maximum Operating Temperature
+150 °C
Tuotetiedot
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 2,70
kpl (toimitus teipissä) (ilman ALV)
€ 3,348
kpl (toimitus teipissä) (Sis ALV:n)
5
€ 2,70
kpl (toimitus teipissä) (ilman ALV)
€ 3,348
kpl (toimitus teipissä) (Sis ALV:n)
5
Osta irtotavarana
Määrä | Yksikköhinta | Per Nauha |
---|---|---|
5 - 5 | € 2,70 | € 13,50 |
10 - 45 | € 2,15 | € 10,75 |
50 - 95 | € 2,10 | € 10,50 |
100 - 495 | € 2,00 | € 10,00 |
500+ | € 1,75 | € 8,75 |
Tekninen dokumentti
Tekniset tiedot
Merkki
ON SemiconductorMaximum Continuous Collector Current
105 (Pulse) A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
64 W
Package Type
TO-3PF
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.5 x 5.5 x 26.5mm
Maximum Operating Temperature
+150 °C
Tuotetiedot
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.