Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
8 to 80mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.97mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.97mm
Width
1.3mm
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 77.50
€ 0.155 Each (Supplied on a Reel) (Exc. Vat)
€ 97.26
€ 0.195 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
500
€ 77.50
€ 0.155 Each (Supplied on a Reel) (Exc. Vat)
€ 97.26
€ 0.195 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
500
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Reel |
---|---|---|
500 - 900 | € 0.155 | € 15.50 |
1000+ | € 0.135 | € 13.50 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
8 to 80mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.97mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.97mm
Width
1.3mm
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.