Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiMaximum Continuous Collector Current
160 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Number of Transistors
1
Maximum Power Dissipation
454 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
P
Pin Count
4
Transistor Configuration
Single
Dimensions
15.8 x 5.2 x 22.74mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Gate Capacitance
5000pF
Alkuperämaa
China
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Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiMaximum Continuous Collector Current
160 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Number of Transistors
1
Maximum Power Dissipation
454 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
P
Pin Count
4
Transistor Configuration
Single
Dimensions
15.8 x 5.2 x 22.74mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Gate Capacitance
5000pF
Alkuperämaa
China