Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
75 W
Minimum DC Current Gain
19, 26
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.67 x 4.83 x 16.51mm
Tuotetiedot
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
€ 5,75
€ 1,15 1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 7,22
€ 1,443 1 kpl (5 kpl/pakkaus) (Sis ALV:n)
Standardi
5
€ 5,75
€ 1,15 1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 7,22
€ 1,443 1 kpl (5 kpl/pakkaus) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Standardi
5
Varastotiedot eivät ole tilapäisesti saatavilla.
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
75 W
Minimum DC Current Gain
19, 26
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.67 x 4.83 x 16.51mm
Tuotetiedot
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.


