Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
30 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.7mm
Number of Elements per Chip
2
Transistor Material
Si
Length
3.1mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
3.6 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
Malaysia
Tuotetiedot
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,286
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,359
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
€ 0,286
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,359
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
30 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.7mm
Number of Elements per Chip
2
Transistor Material
Si
Length
3.1mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
3.6 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
Malaysia
Tuotetiedot