Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
P
Maximum Continuous Drain Current
880 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Width
1.35mm
Minimum Operating Temperature
-55 °C
Height
1mm
Tuotetiedot
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,403
1 kpl (25 kpl/pakkaus) (ilman ALV)
€ 0,506
1 kpl (25 kpl/pakkaus) (Sis ALV:n)
Standardi
25
€ 0,403
1 kpl (25 kpl/pakkaus) (ilman ALV)
€ 0,506
1 kpl (25 kpl/pakkaus) (Sis ALV:n)
Standardi
25
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
25 - 50 | € 0,403 | € 10,08 |
75 - 125 | € 0,277 | € 6,92 |
150 - 275 | € 0,174 | € 4,35 |
300 - 575 | € 0,166 | € 4,15 |
600+ | € 0,16 | € 4,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
P
Maximum Continuous Drain Current
880 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Width
1.35mm
Minimum Operating Temperature
-55 °C
Height
1mm
Tuotetiedot