Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
P
Maximum Continuous Drain Current
430 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
280 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-6 V, +6 V
Width
1.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.7mm
Typical Gate Charge @ Vgs
1.7 nC @ 4.5 V
Height
0.6mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
Malaysia
Tuotetiedot
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,108
1 kpl (4000 kpl/kela) (ilman ALV)
€ 0,134
1 kpl (4000 kpl/kela) (Sis ALV:n)
4000
€ 0,108
1 kpl (4000 kpl/kela) (ilman ALV)
€ 0,134
1 kpl (4000 kpl/kela) (Sis ALV:n)
4000
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
P
Maximum Continuous Drain Current
430 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
280 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-6 V, +6 V
Width
1.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.7mm
Typical Gate Charge @ Vgs
1.7 nC @ 4.5 V
Height
0.6mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
Malaysia
Tuotetiedot