Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3mA
Maximum Drain Source Voltage
30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-883
Pin Count
3
Drain Gate On-Capacitance
4pF
Source Gate On-Capacitance
4pF
Dimensions
1.08 x 0.68 x 0.41mm
Length
1.08mm
Height
0.41mm
Maximum Power Dissipation
100 mW
Maximum Operating Temperature
+150 °C
Width
0.68mm
Tuotetiedot
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,212
kpl (toimitus kelassa) (ilman ALV)
€ 0,263
kpl (toimitus kelassa) (Sis ALV:n)
50
€ 0,212
kpl (toimitus kelassa) (ilman ALV)
€ 0,263
kpl (toimitus kelassa) (Sis ALV:n)
50
Osta irtotavarana
Määrä | Yksikköhinta | Per Kela |
---|---|---|
50 - 200 | € 0,212 | € 10,60 |
250 - 950 | € 0,102 | € 5,10 |
1000 - 2450 | € 0,084 | € 4,20 |
2500+ | € 0,082 | € 4,10 |
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3mA
Maximum Drain Source Voltage
30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-883
Pin Count
3
Drain Gate On-Capacitance
4pF
Source Gate On-Capacitance
4pF
Dimensions
1.08 x 0.68 x 0.41mm
Length
1.08mm
Height
0.41mm
Maximum Power Dissipation
100 mW
Maximum Operating Temperature
+150 °C
Width
0.68mm
Tuotetiedot
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.