Tekninen dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
30 V
Series
STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Height
2.4mm
Tuotetiedot
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
€ 8,27
€ 0,827 1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 10,38
€ 1,038 1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Standardi
10
€ 8,27
€ 0,827 1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 10,38
€ 1,038 1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Standardi
10
Varastotiedot eivät ole tilapäisesti saatavilla.
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
10 - 10 | € 0,827 | € 8,27 |
20+ | € 0,786 | € 7,86 |
Tekninen dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
30 V
Series
STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Height
2.4mm
Tuotetiedot
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.