Tekninen dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
25 V
Package Type
DPAK (TO-252)
Series
STripFET V
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
13.4 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.6mm
Width
6.2mm
Transistor Material
Si
Height
2.4mm
Minimum Operating Temperature
-55 °C
Tuotetiedot
N-Channel STripFET™ V, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 7,75
€ 1,55 1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 9,73
€ 1,945 1 kpl (5 kpl/pakkaus) (Sis ALV:n)
Standardi
5
€ 7,75
€ 1,55 1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 9,73
€ 1,945 1 kpl (5 kpl/pakkaus) (Sis ALV:n)
Standardi
5
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
5 - 20 | € 1,55 | € 7,75 |
25 - 45 | € 1,45 | € 7,25 |
50 - 120 | € 1,30 | € 6,50 |
125 - 245 | € 1,20 | € 6,00 |
250+ | € 1,15 | € 5,75 |
Tekninen dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
25 V
Package Type
DPAK (TO-252)
Series
STripFET V
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
13.4 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.6mm
Width
6.2mm
Transistor Material
Si
Height
2.4mm
Minimum Operating Temperature
-55 °C
Tuotetiedot
N-Channel STripFET™ V, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.