Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
12 V
Package Type
DSBGA
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
15.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
1.9 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1mm
Typical Gate Charge @ Vgs
8.6 nC @ 0 V
Width
1.49mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
0.28mm
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,776
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 0,962
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
10
€ 0,776
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 0,962
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
10
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
10 - 10 | € 0,776 | € 7,76 |
20 - 40 | € 0,50 | € 5,00 |
50 - 90 | € 0,484 | € 4,84 |
100 - 240 | € 0,388 | € 3,88 |
250+ | € 0,347 | € 3,47 |
Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
12 V
Package Type
DSBGA
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
15.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
1.9 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1mm
Typical Gate Charge @ Vgs
8.6 nC @ 0 V
Width
1.49mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
0.28mm