Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
1.04mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
2 nC @ 0 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
0.64mm
Height
0.35mm
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Alkuperämaa
Philippines
Tuotetiedot
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,032
1 kpl (250 kpl/kela) (ilman ALV)
€ 0,04
1 kpl (250 kpl/kela) (Sis ALV:n)
250
€ 0,032
1 kpl (250 kpl/kela) (ilman ALV)
€ 0,04
1 kpl (250 kpl/kela) (Sis ALV:n)
250
Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
1.04mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
2 nC @ 0 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
0.64mm
Height
0.35mm
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Alkuperämaa
Philippines
Tuotetiedot