Tekninen dokumentti
Tekniset tiedot
Merkki
ToshibaPower Switch Topology
High Side
Power Switch Type
High Side Switch
Switch On Resistance
1.2Ω
Maximum Operating Supply Voltage
40 V
Number of Outputs
8
Power Rating
1.2W
Mounting Type
Surface Mount
Package Type
SSOP
Pin Count
24
Maximum Operating Temperature
+85 °C
Minimum Operating Temperature
-40 °C
Dimensions
13.5 x 6 x 1.4mm
Tuotetiedot
Intelligent Power Devices (IPDs), Toshiba
Power and Load Switches, Toshiba
Integrated High-side and Low-side Intelligent Power Switching circuits incorporating many functional and protective features such as over-current, over-voltage, short-circuit, open-circuit load, over-temperature and supply reversal. These highly integrated devices utilise low on-resistance MOSFET transistors to minimise power losses and maintain high efficiency.
€ 127,50
€ 5,10 kpl (toimitus kelassa) (ilman ALV)
€ 160,01
€ 6,40 kpl (toimitus kelassa) (Sis ALV:n)
Tuotantopakkaus (Kela)
25
€ 127,50
€ 5,10 kpl (toimitus kelassa) (ilman ALV)
€ 160,01
€ 6,40 kpl (toimitus kelassa) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Tuotantopakkaus (Kela)
25
Varastotiedot eivät ole tilapäisesti saatavilla.
Määrä | Yksikköhinta |
---|---|
25 - 99 | € 5,10 |
100 - 249 | € 4,95 |
250 - 499 | € 4,85 |
500+ | € 4,75 |
Tekninen dokumentti
Tekniset tiedot
Merkki
ToshibaPower Switch Topology
High Side
Power Switch Type
High Side Switch
Switch On Resistance
1.2Ω
Maximum Operating Supply Voltage
40 V
Number of Outputs
8
Power Rating
1.2W
Mounting Type
Surface Mount
Package Type
SSOP
Pin Count
24
Maximum Operating Temperature
+85 °C
Minimum Operating Temperature
-40 °C
Dimensions
13.5 x 6 x 1.4mm
Tuotetiedot
Intelligent Power Devices (IPDs), Toshiba
Power and Load Switches, Toshiba
Integrated High-side and Low-side Intelligent Power Switching circuits incorporating many functional and protective features such as over-current, over-voltage, short-circuit, open-circuit load, over-temperature and supply reversal. These highly integrated devices utilise low on-resistance MOSFET transistors to minimise power losses and maintain high efficiency.