Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Typical Gate Charge @ Vgs
15.4 nC @ 10 V, 7.3 nC @ 4.5 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.5mm
Alkuperämaa
China
Tuotetiedot
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,765
kpl (toimitus kelassa) (ilman ALV)
€ 0,949
kpl (toimitus kelassa) (Sis ALV:n)
10
€ 0,765
kpl (toimitus kelassa) (ilman ALV)
€ 0,949
kpl (toimitus kelassa) (Sis ALV:n)
10
Osta irtotavarana
Määrä | Yksikköhinta | Per Kela |
---|---|---|
10 - 90 | € 0,765 | € 7,65 |
100 - 240 | € 0,719 | € 7,19 |
250 - 490 | € 0,651 | € 6,51 |
500 - 990 | € 0,613 | € 6,13 |
1000+ | € 0,575 | € 5,75 |
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Typical Gate Charge @ Vgs
15.4 nC @ 10 V, 7.3 nC @ 4.5 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.5mm
Alkuperämaa
China
Tuotetiedot