STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 14 A, 500 V, 3-Pin TO-220 STP14NK50Z
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
500 V
Series
MDmesh, SuperMESH
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
69 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
15.75mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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€ 24.00
€ 2.40 Each (Supplied in a Tube) (Exc. Vat)
€ 30.12
€ 3.012 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
10
€ 24.00
€ 2.40 Each (Supplied in a Tube) (Exc. Vat)
€ 30.12
€ 3.012 Each (Supplied in a Tube) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
10
Stock information temporarily unavailable.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 10 - 95 | € 2.40 | € 12.00 |
| 100 - 495 | € 1.95 | € 9.75 |
| 500 - 995 | € 1.70 | € 8.50 |
| 1000+ | € 1.45 | € 7.25 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
500 V
Series
MDmesh, SuperMESH
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
69 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
15.75mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products