Infineon 2Mbit SPI FRAM Memory 8-Pin DFN, FM25V20A-DG

RS tilauskoodi: 124-2989Tuotemerkki: InfineonValmistajan osanumero.: FM25V20A-DG
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Tekninen dokumentti

Tekniset tiedot

Merkki

Infineon

Memory Size

2Mbit

Organisation

256K x 8 bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

16ns

Mounting Type

Surface Mount

Package Type

DFN

Pin Count

8

Dimensions

5 x 6 x 0.7mm

Length

6mm

Width

5mm

Maximum Operating Supply Voltage

3.6 V

Height

0.7mm

Maximum Operating Temperature

+85 °C

Number of Bits per Word

8bit

Number of Words

256K

Minimum Operating Temperature

-40 °C

Minimum Operating Supply Voltage

2 V

Tuotetiedot

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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€ 21,50

kpl (ilman ALV)

€ 26,66

kpl (Sis ALV:n)

Infineon 2Mbit SPI FRAM Memory 8-Pin DFN, FM25V20A-DG
Valitse pakkaustyyppi

€ 21,50

kpl (ilman ALV)

€ 26,66

kpl (Sis ALV:n)

Infineon 2Mbit SPI FRAM Memory 8-Pin DFN, FM25V20A-DG
Varastotiedot eivät ole tilapäisesti saatavilla.
Valitse pakkaustyyppi

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1 - 9€ 21,50
10 - 24€ 17,80
25 - 99€ 17,30
100 - 499€ 16,90
500+€ 16,40

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Tekninen dokumentti

Tekniset tiedot

Merkki

Infineon

Memory Size

2Mbit

Organisation

256K x 8 bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

16ns

Mounting Type

Surface Mount

Package Type

DFN

Pin Count

8

Dimensions

5 x 6 x 0.7mm

Length

6mm

Width

5mm

Maximum Operating Supply Voltage

3.6 V

Height

0.7mm

Maximum Operating Temperature

+85 °C

Number of Bits per Word

8bit

Number of Words

256K

Minimum Operating Temperature

-40 °C

Minimum Operating Supply Voltage

2 V

Tuotetiedot

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.