Tekninen dokumentti
Tekniset tiedot
Merkki
Cypress SemiconductorMemory Size
256kbit
Organisation
32K x 8 bit
Interface Type
Parallel
Maximum Random Access Time
70ns
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
32
Dimensions
11.9 x 8.1 x 1.05mm
Maximum Operating Supply Voltage
3.6 V
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Number of Words
32K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2 V
Tuotetiedot
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 5,60
Each (In a Tray of 234) (ilman ALV)
€ 6,944
Each (In a Tray of 234) (Sis ALV:n)
234
€ 5,60
Each (In a Tray of 234) (ilman ALV)
€ 6,944
Each (In a Tray of 234) (Sis ALV:n)
234
Tekninen dokumentti
Tekniset tiedot
Merkki
Cypress SemiconductorMemory Size
256kbit
Organisation
32K x 8 bit
Interface Type
Parallel
Maximum Random Access Time
70ns
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
32
Dimensions
11.9 x 8.1 x 1.05mm
Maximum Operating Supply Voltage
3.6 V
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Number of Words
32K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2 V
Tuotetiedot
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.