Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
290 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
1
Width
1.35mm
Length
2.2mm
Typical Gate Charge @ Vgs
0.737 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
Product details
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 114.00
€ 0.038 Each (On a Reel of 3000) (Exc. Vat)
€ 143.07
€ 0.048 Each (On a Reel of 3000) (inc. VAT)
3000
€ 114.00
€ 0.038 Each (On a Reel of 3000) (Exc. Vat)
€ 143.07
€ 0.048 Each (On a Reel of 3000) (inc. VAT)
Stock information temporarily unavailable.
3000
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
290 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
1
Width
1.35mm
Length
2.2mm
Typical Gate Charge @ Vgs
0.737 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
Product details


