Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
4.6 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
91 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.13 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
7.7 nC @ 10 V
Width
1.4mm
Number of Elements per Chip
1
Series
DMN2058U
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Tuotetiedot
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,087
1 kpl (50 kpl/pakkaus) (ilman ALV)
€ 0,108
1 kpl (50 kpl/pakkaus) (Sis ALV:n)
50
€ 0,087
1 kpl (50 kpl/pakkaus) (ilman ALV)
€ 0,108
1 kpl (50 kpl/pakkaus) (Sis ALV:n)
50
Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
4.6 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
91 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.13 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
7.7 nC @ 10 V
Width
1.4mm
Number of Elements per Chip
1
Series
DMN2058U
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Tuotetiedot