Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Package Type
U-DFN2020
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.05mm
Typical Gate Charge @ Vgs
13.2 nC @ 15 V
Height
0.58mm
Series
DMN3025LFDF
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Tuotetiedot
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,034
1 kpl (50 kpl/pakkaus) (ilman ALV)
€ 0,042
1 kpl (50 kpl/pakkaus) (Sis ALV:n)
50
€ 0,034
1 kpl (50 kpl/pakkaus) (ilman ALV)
€ 0,042
1 kpl (50 kpl/pakkaus) (Sis ALV:n)
50
Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Package Type
U-DFN2020
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.05mm
Typical Gate Charge @ Vgs
13.2 nC @ 15 V
Height
0.58mm
Series
DMN3025LFDF
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Tuotetiedot