Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
520 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.4mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Transistor Material
Si
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Length
3mm
Height
1mm
Forward Diode Voltage
1.4V
Minimum Operating Temperature
-55 °C
Alkuperämaa
China
Tuotetiedot
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,063
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,078
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
€ 0,063
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,078
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
520 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.4mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Transistor Material
Si
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Length
3mm
Height
1mm
Forward Diode Voltage
1.4V
Minimum Operating Temperature
-55 °C
Alkuperämaa
China
Tuotetiedot