Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
20 V
Package Type
X1-DFN1212
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Length
1.25mm
Typical Gate Charge @ Vgs
0.8 nC @ 8V
Width
1.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
0.48mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Alkuperämaa
China
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,068
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,084
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
€ 0,068
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,084
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
Osta irtotavarana
Määrä | Yksikköhinta | Per Kela |
---|---|---|
3000 - 6000 | € 0,068 | € 204,00 |
9000 - 12000 | € 0,065 | € 195,00 |
15000+ | € 0,063 | € 189,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
20 V
Package Type
X1-DFN1212
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Length
1.25mm
Typical Gate Charge @ Vgs
0.8 nC @ 8V
Width
1.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
0.48mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Alkuperämaa
China