Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
95 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
3.05mm
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Typical Gate Charge @ Vgs
8.6 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Tuotetiedot
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 3,18
€ 0,318 kpl (toimitus kelassa) (ilman ALV)
€ 3,99
€ 0,399 kpl (toimitus kelassa) (Sis ALV:n)
Tuotantopakkaus (Kela)
10
€ 3,18
€ 0,318 kpl (toimitus kelassa) (ilman ALV)
€ 3,99
€ 0,399 kpl (toimitus kelassa) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Tuotantopakkaus (Kela)
10
Varastotiedot eivät ole tilapäisesti saatavilla.
Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
95 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
3.05mm
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Typical Gate Charge @ Vgs
8.6 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Tuotetiedot


