Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
60 V
Series
IntelliFET
Package Type
SM
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.13 W
Transistor Configuration
Isolated
Number of Elements per Chip
2
Maximum Operating Temperature
+125 °C
Length
4.95mm
Width
3.95mm
Transistor Material
Si
Minimum Operating Temperature
-40 °C
Height
1.5mm
Alkuperämaa
Germany
Tuotetiedot
IntelliFET Self-protected MOSFETs, Diodes Inc
IntelliFET are self-protected MOSFETs that integrate a complete array of protection circuits that guard against ESD (Electrostatic Sensitive Device), over-current, over-voltage, and over-temperature conditions.
MOSFET Transistors, Diodes Inc.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,577
kpl (toimitus kelassa) (ilman ALV)
€ 0,724
kpl (toimitus kelassa) (Sis ALV:n)
Tuotantopakkaus (Kela)
5
€ 0,577
kpl (toimitus kelassa) (ilman ALV)
€ 0,724
kpl (toimitus kelassa) (Sis ALV:n)
Tuotantopakkaus (Kela)
5
Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
60 V
Series
IntelliFET
Package Type
SM
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.13 W
Transistor Configuration
Isolated
Number of Elements per Chip
2
Maximum Operating Temperature
+125 °C
Length
4.95mm
Width
3.95mm
Transistor Material
Si
Minimum Operating Temperature
-40 °C
Height
1.5mm
Alkuperämaa
Germany
Tuotetiedot
IntelliFET Self-protected MOSFETs, Diodes Inc
IntelliFET are self-protected MOSFETs that integrate a complete array of protection circuits that guard against ESD (Electrostatic Sensitive Device), over-current, over-voltage, and over-temperature conditions.