Fairchild FGH75T65UPD_F085 IGBT, 150 A 650 V, 3-Pin TO-247, Through Hole
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Fairchild SemiconductorMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
375 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.6 x 4.7 x 20.6mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Alkuperämaa
Korea, Republic Of
Tuotetiedot
Automotive IGBT, Fairchild Semiconductor
A range of Field Stop Trench IGBTs from Fairchild Semiconductor that have been stress tested and meet the AEC-Q101 standard.
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Tarkista myöhemmin uudelleen.
€ 5,00
1 kpl (30 kpl/putki) (ilman ALV)
€ 6,20
1 kpl (30 kpl/putki) (Sis ALV:n)
30
€ 5,00
1 kpl (30 kpl/putki) (ilman ALV)
€ 6,20
1 kpl (30 kpl/putki) (Sis ALV:n)
30
Osta irtotavarana
Määrä | Yksikköhinta | Per Putki |
---|---|---|
30 - 120 | € 5,00 | € 150,00 |
150 - 270 | € 4,50 | € 135,00 |
300+ | € 4,10 | € 123,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
Fairchild SemiconductorMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
375 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.6 x 4.7 x 20.6mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Alkuperämaa
Korea, Republic Of
Tuotetiedot
Automotive IGBT, Fairchild Semiconductor
A range of Field Stop Trench IGBTs from Fairchild Semiconductor that have been stress tested and meet the AEC-Q101 standard.
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.