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Tekniset tiedot
Merkki
Fuji ElectricMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
133 W
Configuration
3 Phase Bridge
Package Type
M711
Mounting Type
PCB Mount
Channel Type
N
Pin Count
24
Transistor Configuration
3 Phase
Dimensions
107.5 x 45 x 17mm
Maximum Operating Temperature
+150 °C
Tuotetiedot
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 64,00
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€ 64,00
kpl (ilman ALV)
€ 79,36
kpl (Sis ALV:n)
1
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1 - 9 | € 64,00 |
10 - 19 | € 56,00 |
20+ | € 49,70 |
Tekninen dokumentti
Tekniset tiedot
Merkki
Fuji ElectricMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
133 W
Configuration
3 Phase Bridge
Package Type
M711
Mounting Type
PCB Mount
Channel Type
N
Pin Count
24
Transistor Configuration
3 Phase
Dimensions
107.5 x 45 x 17mm
Maximum Operating Temperature
+150 °C
Tuotetiedot
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.