Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
240 A, 522 A
Maximum Drain Source Voltage
40 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
750 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
305 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Series
COOLiRFET
Minimum Operating Temperature
-55 °C
Height
4.83mm
Tuotetiedot
COOLiRFET™ Power MOSFET, Infineon
Infineon's Automotive-qualified COOLiRFET™ Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 5,20
kpl (toimitus putkessa) (ilman ALV)
€ 6,53
kpl (toimitus putkessa) (Sis ALV:n)
Tuotantopakkaus (Putki)
1
€ 5,20
kpl (toimitus putkessa) (ilman ALV)
€ 6,53
kpl (toimitus putkessa) (Sis ALV:n)
Tuotantopakkaus (Putki)
1
Osta irtotavarana
Määrä | Yksikköhinta |
---|---|
1 - 4 | € 5,20 |
5 - 9 | € 5,10 |
10 - 14 | € 4,95 |
15 - 24 | € 4,80 |
25+ | € 4,70 |
Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
240 A, 522 A
Maximum Drain Source Voltage
40 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
750 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
305 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Series
COOLiRFET
Minimum Operating Temperature
-55 °C
Height
4.83mm
Tuotetiedot
COOLiRFET™ Power MOSFET, Infineon
Infineon's Automotive-qualified COOLiRFET™ Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.