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Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
99 A
Maximum Drain Source Voltage
150 V
Package Type
TO-262
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
12.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
9.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
77 nC @ 10 V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Automotive Standard
AEC-Q101
Series
AUIRF
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Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
99 A
Maximum Drain Source Voltage
150 V
Package Type
TO-262
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
12.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
9.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
77 nC @ 10 V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Automotive Standard
AEC-Q101
Series
AUIRF