Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
75 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+150 °C
Width
6.35mm
Number of Elements per Chip
1
Length
5.35mm
Typical Gate Charge @ Vgs
63.4 nC @ 10 V
Height
1.1mm
Forward Diode Voltage
1.2V
Series
BSC036NE7NS3 G
Minimum Operating Temperature
-55 °C
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 2,40
1 kpl (5000 kpl/kela) (ilman ALV)
€ 2,976
1 kpl (5000 kpl/kela) (Sis ALV:n)
5000
€ 2,40
1 kpl (5000 kpl/kela) (ilman ALV)
€ 2,976
1 kpl (5000 kpl/kela) (Sis ALV:n)
5000
Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
75 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+150 °C
Width
6.35mm
Number of Elements per Chip
1
Length
5.35mm
Typical Gate Charge @ Vgs
63.4 nC @ 10 V
Height
1.1mm
Forward Diode Voltage
1.2V
Series
BSC036NE7NS3 G
Minimum Operating Temperature
-55 °C