Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
30 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+150 °C
Length
5.49mm
Typical Gate Charge @ Vgs
13 nC @ 4.5 V
Width
6.35mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Series
BSC050N03LS G
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,28
1 kpl (5000 kpl/kela) (ilman ALV)
€ 0,347
1 kpl (5000 kpl/kela) (Sis ALV:n)
5000
€ 0,28
1 kpl (5000 kpl/kela) (ilman ALV)
€ 0,347
1 kpl (5000 kpl/kela) (Sis ALV:n)
5000
Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
30 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+150 °C
Length
5.49mm
Typical Gate Charge @ Vgs
13 nC @ 4.5 V
Width
6.35mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Series
BSC050N03LS G