Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
85 A
Maximum Drain Source Voltage
40 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
36 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
5.49mm
Height
1.1mm
Series
BSC050N04LS G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,465
1 kpl (5000 kpl/kela) (ilman ALV)
€ 0,577
1 kpl (5000 kpl/kela) (Sis ALV:n)
5000
€ 0,465
1 kpl (5000 kpl/kela) (ilman ALV)
€ 0,577
1 kpl (5000 kpl/kela) (Sis ALV:n)
5000
Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
85 A
Maximum Drain Source Voltage
40 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
36 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
5.49mm
Height
1.1mm
Series
BSC050N04LS G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V