Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
200 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.35mm
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Height
1.1mm
Series
BSC12DN20NS3 G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 1,10
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 1,364
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
10
€ 1,10
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 1,364
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
10
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
10 - 40 | € 1,10 | € 11,00 |
50 - 90 | € 1,05 | € 10,50 |
100 - 240 | € 0,961 | € 9,61 |
250 - 490 | € 0,864 | € 8,64 |
500+ | € 0,822 | € 8,22 |
Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
200 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.35mm
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Height
1.1mm
Series
BSC12DN20NS3 G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V