Infineon OptiMOS P P-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON BSZ086P03NS3GATMA1

RS Stock No.: 825-9130PBrand: InfineonManufacturers Part No.: BSZ086P03NS3GATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

30 V

Series

OptiMOS P

Package Type

TSDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

13.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.9V

Minimum Gate Threshold Voltage

3.1V

Maximum Power Dissipation

69 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

3.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.4mm

Typical Gate Charge @ Vgs

43.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Product details

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 11.44

€ 0.572 Each (Supplied on a Reel) (Exc. Vat)

€ 14.36

€ 0.718 Each (Supplied on a Reel) (inc. VAT)

Infineon OptiMOS P P-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON BSZ086P03NS3GATMA1
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 20.

Production -

Available in multiples of 20.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

20

Available in multiples of 20
20€ 11.44
40€ 22.88
60€ 34.32
80€ 45.76
100€ 57.20
120€ 68.64
140€ 80.08
160€ 91.52
180€ 102.96
200€ 114.40
220€ 125.84
240€ 137.28
260€ 148.72
280€ 160.16
300€ 171.60

€ 11.44

€ 0.572 Each (Supplied on a Reel) (Exc. Vat)

€ 14.36

€ 0.718 Each (Supplied on a Reel) (inc. VAT)

Infineon OptiMOS P P-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON BSZ086P03NS3GATMA1

Stock information temporarily unavailable.

Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 20.

Production -

Available in multiples of 20.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

20

Available in multiples of 20
20€ 11.44
40€ 22.88
60€ 34.32
80€ 45.76
100€ 57.20
120€ 68.64
140€ 80.08
160€ 91.52
180€ 102.96
200€ 114.40
220€ 125.84
240€ 137.28
260€ 148.72
280€ 160.16
300€ 171.60

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

30 V

Series

OptiMOS P

Package Type

TSDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

13.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.9V

Minimum Gate Threshold Voltage

3.1V

Maximum Power Dissipation

69 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

3.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.4mm

Typical Gate Charge @ Vgs

43.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Product details

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more