Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Length
10.65mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Width
4.85mm
Series
OptiMOS 3
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
16.15mm
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 72.50
€ 1.45 Each (Supplied in a Tube) (Exc. Vat)
€ 90.99
€ 1.82 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
50
€ 72.50
€ 1.45 Each (Supplied in a Tube) (Exc. Vat)
€ 90.99
€ 1.82 Each (Supplied in a Tube) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
50
Stock information temporarily unavailable.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 90 | € 1.45 | € 14.50 |
| 100 - 240 | € 1.30 | € 13.00 |
| 250 - 490 | € 1.15 | € 11.50 |
| 500+ | € 1.10 | € 11.00 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Length
10.65mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Width
4.85mm
Series
OptiMOS 3
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
16.15mm
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


