N-Channel MOSFET, 28 A, 100 V, 3-Pin TO-220 FP Infineon IPA180N10N3GXKSA1

RS Stock No.: 892-2286PBrand: InfineonManufacturers Part No.: IPA180N10N3GXKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Length

10.65mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Width

4.85mm

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

16.15mm

Product details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 72.50

€ 1.45 Each (Supplied in a Tube) (Exc. Vat)

€ 90.99

€ 1.82 Each (Supplied in a Tube) (inc. VAT)

N-Channel MOSFET, 28 A, 100 V, 3-Pin TO-220 FP Infineon IPA180N10N3GXKSA1
Select packaging type

€ 72.50

€ 1.45 Each (Supplied in a Tube) (Exc. Vat)

€ 90.99

€ 1.82 Each (Supplied in a Tube) (inc. VAT)

N-Channel MOSFET, 28 A, 100 V, 3-Pin TO-220 FP Infineon IPA180N10N3GXKSA1

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

QuantityUnit pricePer Tube
50 - 90€ 1.45€ 14.50
100 - 240€ 1.30€ 13.00
250 - 490€ 1.15€ 11.50
500+€ 1.10€ 11.00

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Length

10.65mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Width

4.85mm

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

16.15mm

Product details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more