Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
84 A
Maximum Drain Source Voltage
200 V
Series
OptiMOS FD
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
11.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+170 °C
Length
10.31mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Width
9.45mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
4.57mm
Tuotetiedot
Infineon OptiMOS™ FD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 8,80
kpl (toimitus teipissä) (ilman ALV)
€ 11,044
kpl (toimitus teipissä) (Sis ALV:n)
Standardi
2
€ 8,80
kpl (toimitus teipissä) (ilman ALV)
€ 11,044
kpl (toimitus teipissä) (Sis ALV:n)
Standardi
2
Osta irtotavarana
Määrä | Yksikköhinta | Per Nauha |
---|---|---|
2 - 8 | € 8,80 | € 17,60 |
10 - 38 | € 7,60 | € 15,20 |
40 - 98 | € 6,70 | € 13,40 |
100 - 198 | € 6,30 | € 12,60 |
200+ | € 6,00 | € 12,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
84 A
Maximum Drain Source Voltage
200 V
Series
OptiMOS FD
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
11.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+170 °C
Length
10.31mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Width
9.45mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
4.57mm
Tuotetiedot
Infineon OptiMOS™ FD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.