Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Series
IPD25CN10N G
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
7.47mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
23 nC @ 10 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Height
2.41mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,589
1 kpl (2500 kpl/kela) (ilman ALV)
€ 0,73
1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
€ 0,589
1 kpl (2500 kpl/kela) (ilman ALV)
€ 0,73
1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Series
IPD25CN10N G
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
7.47mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
23 nC @ 10 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Height
2.41mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V