Infineon OptiMOS™-T N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK IPD35N10S3L26ATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™-T
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.026 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Number of Elements per Chip
1
Transistor Material
Si
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€ 1,665.00
€ 0.666 Each (On a Reel of 2500) (Exc. Vat)
€ 2,089.58
€ 0.836 Each (On a Reel of 2500) (inc. VAT)
2500
€ 1,665.00
€ 0.666 Each (On a Reel of 2500) (Exc. Vat)
€ 2,089.58
€ 0.836 Each (On a Reel of 2500) (inc. VAT)
Stock information temporarily unavailable.
2500
Stock information temporarily unavailable.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™-T
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.026 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Number of Elements per Chip
1
Transistor Material
Si
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products