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InfineonChannel Type
P
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Series
OptiMOS P
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
137 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +5 V
Length
6.5mm
Typical Gate Charge @ Vgs
125 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Height
2.3mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
Germany
Tuotetiedot
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 2 625,00
€ 1,05 1 kpl (2500 kpl/kela) (ilman ALV)
€ 3 294,38
€ 1,318 1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
€ 2 625,00
€ 1,05 1 kpl (2500 kpl/kela) (ilman ALV)
€ 3 294,38
€ 1,318 1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
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Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
P
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Series
OptiMOS P
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
137 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +5 V
Length
6.5mm
Typical Gate Charge @ Vgs
125 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Height
2.3mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
Germany
Tuotetiedot
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.