Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
75 V
Package Type
TO-220AB
Series
IRF1407PbF
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Width
4.83mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
16.51mm
Forward Diode Voltage
1.3V
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 2,25
1 kpl (50 kpl/putki) (ilman ALV)
€ 2,79
1 kpl (50 kpl/putki) (Sis ALV:n)
50
€ 2,25
1 kpl (50 kpl/putki) (ilman ALV)
€ 2,79
1 kpl (50 kpl/putki) (Sis ALV:n)
50
Osta irtotavarana
Määrä | Yksikköhinta | Per Putki |
---|---|---|
50 - 50 | € 2,25 | € 112,50 |
100 - 200 | € 1,80 | € 90,00 |
250 - 450 | € 1,70 | € 85,00 |
500 - 950 | € 1,55 | € 77,50 |
1000+ | € 1,45 | € 72,50 |
Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
75 V
Package Type
TO-220AB
Series
IRF1407PbF
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Width
4.83mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
16.51mm
Forward Diode Voltage
1.3V