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Tekniset tiedot
Merkki
InfineonChannel Type
P
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
100 V
Series
HEXFET
Package Type
I2PAK (TO-262)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
150 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.54mm
Width
4.69mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
10.54mm
Tuotetiedot
P-Channel Power MOSFET 100V to 150V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Tarkista myöhemmin uudelleen.
€ 2,80
1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 3,514
1 kpl (5 kpl/pakkaus) (Sis ALV:n)
5
€ 2,80
1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 3,514
1 kpl (5 kpl/pakkaus) (Sis ALV:n)
5
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
5 - 20 | € 2,80 | € 14,00 |
25 - 45 | € 2,55 | € 12,75 |
50 - 120 | € 2,35 | € 11,75 |
125 - 245 | € 2,20 | € 11,00 |
250+ | € 2,05 | € 10,25 |
Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
P
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
100 V
Series
HEXFET
Package Type
I2PAK (TO-262)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
150 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.54mm
Width
4.69mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
10.54mm
Tuotetiedot
P-Channel Power MOSFET 100V to 150V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.